Positron annihilation in narrow-gap semiconductors
Identifieur interne : 01C352 ( Main/Repository ); précédent : 01C351; suivant : 01C353Positron annihilation in narrow-gap semiconductors
Auteurs : RBID : Pascal:95-0262364Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
The valence electron and positron charge densities in InAs and InSb are obtained from wave functions derived in a model pseudopotential band-structure calculation. It is found that the positron density is maximum in the open interstices and is excluded not only, as usual, from the ion cores but also to a considerable degree from the valence bonds. Electron-positron momentum densities are calculated for the (001-110) plane. The results are used to analyze the positron effect in narrow-gap semiconductors
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 01CA14
Links to Exploration step
Pascal:95-0262364Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Positron annihilation in narrow-gap semiconductors</title><author><name sortKey="Bouarissa, N" uniqKey="Bouarissa N">N. Bouarissa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Univ. Sidi-Bel-Abbes, dep. physics, computational materials sci. lab.</s1><s2>Sidi-Bel-Abbes 22000</s2><s3>ALB</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Albanie</country><wicri:noRegion>Sidi-Bel-Abbes 22000</wicri:noRegion></affiliation></author><author><name sortKey="West, R N" uniqKey="West R">R. N. West</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Univ. Texas Arlington, dep. physics</s1><s2>Arlington TX 80900</s2><s3>USA</s3><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Arlington TX 80900</wicri:noRegion></affiliation></author><author><name sortKey="Aourag, H" uniqKey="Aourag H">H. Aourag</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Univ. Sidi-Bel-Abbes, dep. physics, computational materials sci. lab.</s1><s2>Sidi-Bel-Abbes 22000</s2><s3>ALB</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Albanie</country><wicri:noRegion>Sidi-Bel-Abbes 22000</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">95-0262364</idno><date when="1995">1995</date><idno type="stanalyst">PASCAL 95-0262364 INIST</idno><idno type="RBID">Pascal:95-0262364</idno><idno type="wicri:Area/Main/Corpus">01CA14</idno><idno type="wicri:Area/Main/Repository">01C352</idno></publicationStmt><seriesStmt><idno type="ISSN">0370-1972</idno><title level="j" type="abbreviated">Phys. status solidi, B, Basic res.</title><title level="j" type="main">Physica status solidi. B. Basic research</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annihilation</term><term>Binary compounds</term><term>Charge density</term><term>Electronic structure</term><term>Energy-level density</term><term>III-V semiconductors</term><term>Indium antimonides</term><term>Indium arsenides</term><term>Momentum density</term><term>Positron probes</term><term>Pseudopotential</term><term>Theoretical study</term><term>Valence electron</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude théorique</term><term>Structure électronique</term><term>Annihilation</term><term>Sonde positonique</term><term>Densité niveau énergie</term><term>Electron valence</term><term>Densité quantité mouvement</term><term>Pseudopotentiel</term><term>Densité charge</term><term>Semiconducteur III-V</term><term>Indium arséniure</term><term>Indium antimoniure</term><term>Composé binaire</term><term>7120F</term><term>7870B</term><term>InAs</term><term>InSb</term><term>As In</term><term>In Sb</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The valence electron and positron charge densities in InAs and InSb are obtained from wave functions derived in a model pseudopotential band-structure calculation. It is found that the positron density is maximum in the open interstices and is excluded not only, as usual, from the ion cores but also to a considerable degree from the valence bonds. Electron-positron momentum densities are calculated for the (001-110) plane. The results are used to analyze the positron effect in narrow-gap semiconductors</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0370-1972</s0></fA01><fA02 i1="01"><s0>PSSBBD</s0></fA02><fA03 i2="1"><s0>Phys. status solidi, B, Basic res.</s0></fA03><fA05><s2>188</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Positron annihilation in narrow-gap semiconductors</s1></fA08><fA11 i1="01" i2="1"><s1>BOUARISSA (N.)</s1></fA11><fA11 i1="02" i2="1"><s1>WEST (R. N.)</s1></fA11><fA11 i1="03" i2="1"><s1>AOURAG (H.)</s1></fA11><fA14 i1="01"><s1>Univ. Sidi-Bel-Abbes, dep. physics, computational materials sci. lab.</s1><s2>Sidi-Bel-Abbes 22000</s2><s3>ALB</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Univ. Texas Arlington, dep. physics</s1><s2>Arlington TX 80900</s2><s3>USA</s3><sZ>2 aut.</sZ></fA14><fA20><s1>723-734</s1></fA20><fA21><s1>1995</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183B</s2><s5>354000056383180140</s5></fA43><fA44><s0>0000</s0></fA44><fA45><s0>49 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>95-0262364</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. B. Basic research</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>The valence electron and positron charge densities in InAs and InSb are obtained from wave functions derived in a model pseudopotential band-structure calculation. It is found that the positron density is maximum in the open interstices and is excluded not only, as usual, from the ion cores but also to a considerable degree from the valence bonds. Electron-positron momentum densities are calculated for the (001-110) plane. The results are used to analyze the positron effect in narrow-gap semiconductors</s0></fC01><fC02 i1="01" i2="3"><s0>001B70A20F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H70B</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude théorique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Theoretical study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Structure électronique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electronic structure</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Annihilation</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Annihilation</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Sonde positonique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Positron probes</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Densité niveau énergie</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Energy-level density</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Electron valence</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Valence electron</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Electrón valencia</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Densité quantité mouvement</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Momentum density</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Pseudopotentiel</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Pseudopotential</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Densité charge</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Charge density</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>13</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>13</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>14</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>14</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium antimoniure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Composé binaire</s0><s5>16</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Binary compounds</s0><s5>16</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>7120F</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>7870B</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>InSb</s0><s4>INC</s4><s5>93</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>94</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>In Sb</s0><s4>INC</s4><s5>95</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>17</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>17</s5></fC07><fN21><s1>156</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 01C352 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 01C352 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:95-0262364
|texte= Positron annihilation in narrow-gap semiconductors
}}
| This area was generated with Dilib version V0.5.77. |  |